发明名称 Memory systems having a multilevel cell flash memory and programming methods thereof
摘要 A method of programming a multilevel cell flash memory includes dividing a memory cell array of the flash memory into a user block and a cache block, programming first LSB data into a page of the user block, programming first MSB data into the page of the user block after programming the first LSB data, programming second LSB data into a page of the cache block, and storing control data for controlling the flash memory in the cache block.
申请公布号 US2008177934(A1) 申请公布日期 2008.07.24
申请号 US20070796978 申请日期 2007.04.30
申请人 SAMSUNG ELECTRONICS. CO., LTD. 发明人 YU JAE-SUNG;CHOI JIN-HYEOK
分类号 G06F12/00 主分类号 G06F12/00
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