发明名称 METHOD AND SYSTEM FOR DRIVING PHASE CHANGE MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a driving method and a driving system that avoid over-writing of a phase change memory. <P>SOLUTION: The method includes counting the number of accesses to the phase change memory (including the number of RESET, the number of SET, or the number read), and refreshing it when the number of accesses is larger than a first predetermined value, in which SET and RESET operations are successively performed. Thereby, the phase change memory is prevented from being excessively crystallized or non-crystallized. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008171541(A) 申请公布日期 2008.07.24
申请号 JP20070328602 申请日期 2007.12.20
申请人 IND TECHNOL RES INST;POWERCHIP SEMICONDUCTOR CORP;NANYA SCI & TECHNOL CO LTD;PROMOS TECHNOL INC;HUABANG ELECTRONIC CO LTD 发明人 SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA;WANG WEN-HAN
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项
地址