| 发明名称 |
Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor |
| 摘要 |
A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl<SUB>4</SUB>.
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| 申请公布号 |
US7399716(B2) |
申请公布日期 |
2008.07.15 |
| 申请号 |
US20060340692 |
申请日期 |
2006.01.27 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-HYUN;MIN YO-SEP;CHO YOUNG-JIN |
| 分类号 |
H01L21/44;C01G27/02;C01G27/04;C07F7/00;C23C14/08;C23C14/58;C23C16/40;H01L21/28;H01L21/316;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H01L29/51;H01L29/78 |
主分类号 |
H01L21/44 |
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