BI-DIRECTIONAL RESISTIVE RANDOM ACCESS MEMORY INCLUDING SUB CELL ARRAY AND WRITING METHOD USING THEREOF

摘要

A bi-directional resistive random access memory(RRAM) comprising a sub cell array and a data writing method using the same are provided to perform write operation at the same time regardless of different data value, by comprising sub cell arrays comprising an X-decoder and driver independently. A nonvolatile memory device determines a data value according to the polarity of a voltage over both ends of a cell. The nonvolatile memory device comprises a memory cell array including sub cell arrays(SCA0-SCA15) including at least one input/output line(IO0-IO15). Each sub cell array comprises an X-decoder and driver(XDEC&DRV0-XDEC&DRV15) independently. The X-decoder driver enables a corresponding word line, and applies a bias voltage to the enabled word line according to the data value. Each sub cell array comprises one input/output line.