| 摘要 |
<p>A memory device and a method for manufacturing the same are provided to improve integration density without using an extra switching device or an additional storage device. A memory device comprises a substrate(70), a lower electrode(71), a ferroelectric layer(72) mounted on the lower electrode, and an upper electrode(73). The lower electrode of a conductive material is installed on the substrate. The upper electrode of a conductive material is placed on the ferroelectric layer. The ferroelectric layer is made of a mixture of an inorganic ferroelectric material and an organic material. The lower electrode and the upper electrode are made of a conductive organic material. The substrate is made of one of a Si wafer, a Ge wafer, paper, paper coated with Parylene, and the organic material.</p> |
