发明名称 |
Halbleiter-Lichtemitterbauelement |
摘要 |
A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer 12; and a second-conductivity-type layer 14 formed on the active layer 13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer 12 includes an intermediate layer 23 made of Ga1-xInxN (0<x<1). |
申请公布号 |
DE112006002450(T5) |
申请公布日期 |
2008.07.03 |
申请号 |
DE20061102450T |
申请日期 |
2006.09.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. |
发明人 |
KINOSHITA, YOSHITAKA;KAMEI, HIDENORI |
分类号 |
H01L33/12;H01L33/32 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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