NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A non-volatile memory device and a manufacturing method thereof are provided to improve electrical properties of a high dielectric layer by forming nitride containing insulation layers. A non-volatile memory device comprises a tunnel insulation layer(102) on a semiconductor substrate, a floating gate on the tunnel insulation layer, a first nitride containing insulation layer(106) on the floating gate, a first insulation layer(108) on the first nitride containing insulation layer, a high dielectric insulation layer(112) on the first insulation layer, a second insulation layer(116) on the high dielectric insulation layer, a second nitride containing insulation layer(100), and a control gate on the second nitride containing insulation layer. The floating gate is made of a poly silicon film. Each of the first and second nitride containing insulation layers includes a silicon oxidation nitride layer or a silicon nitride layer.