| 摘要 |
A method for forming an interconnection of a semiconductor device is provided to increase the grain size of a bulk tungsten film by forming an amorphous boron layer on a tungsten nucleation layer. A tungsten nucleation layer(130) is formed on a semiconductor substrate(100) having a desired lower structure. An amorphous boron layer(140) is formed on the tungsten nucleation layer by supplying H2 gas and B2H6 gas. The thickness of the boron layer is 5~70Å. Then, a bulk tungsten film(150) is deposited on the boron layer.
|
