| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a PMOS transistor non-volatile semiconductor memory improving the injection efficiency of a hot electron to a charge storage layer. <P>SOLUTION: The PMOS transistor non-volatile semiconductor memory includes: first and second p-type diffusion layers 21, 22 formed as a source and a drain in an n-type silicon layer 20; a gate electrode 50 formed on a channel region CNL between a source 21 and a drain 22 via an insulating film 30; and the charge storage layer 40 formed in the insulating film 30 between the channel region CNL and the gate electrode 50. A direction toward the drain 22 from the source 21 is a crystal orientation <100> of the n-type silicon layer 20. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
