| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a strained Si substrate having low surface roughness, threading dislocation density and particle level. SOLUTION: The manufacturing method of the strained Si substrate includes at least the steps of forming a lattice-relaxed SiGe layer on a silicon monocrystal substrate, planarizing the surface of the SiGe layer by CMP, and forming a strained Si layer on the surface of the planarized SiGe layer. The method is characterized by steps of SC1-cleaning the surface of the SiGe layer, before forming the strained Si layer on the lattice-relaxed SiGe layer which is planarized, heat-treating the substrate, having the SC1-cleaned SiGe layer in a hydrogen-containing atmosphere at 800°C or higher, immediately forming a protective Si layer on the surface of the SiGe layer on the heat-treated substrate, without having to lower from 800°C after the heat treatment, and forming the strained Si layer on the surface of the protective Si layer, at a temperature lower than a formation temperature of the protective Si layer. COPYRIGHT: (C)2008,JPO&INPIT
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