发明名称 Array sense amplifiers, memory devices and systems including same, and methods of operation
摘要 A sense amplifier having an amplifier stage with decreased gain is described. The sense amplifier includes a first input/output ("I/O") node and a second complementary I/O node. The sense amplifier includes two amplifier stages, each for amplifying a signal on one of the I/O nodes. The first amplifier stage, having a first conductivity-type, amplifies one of the I/O node towards a first voltage. The second amplifier stage, having a second conductivity-type, amplifies the other I/O node towards a second voltage. The sense amplifier also includes a resistance circuit coupled to the second amplifier stage to reduce the gain of the second amplifier stage thereby reducing the rate of amplification of the signal on the corresponding I/O node.
申请公布号 US2008159035(A1) 申请公布日期 2008.07.03
申请号 US20060646735 申请日期 2006.12.27
申请人 MICRON TECHNOLOGY, INC. 发明人 JUNG CHULMIN;KIM TAE
分类号 G11C7/10;G11C7/06 主分类号 G11C7/10
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