| 摘要 |
<p>A pattern for measuring an ohmic contact resistance, a thin film transistor substrate, and a manufacturing method thereof are provided to easily measure ohmic contact resistance formed in a channel of the thin film transistor substrate manufactured through a four mask process by fabricating the pattern for measuring the ohmic contact resistance through a mask process using a half tone mask. A gate dielectric covers a substrate. A semiconductor pattern(230) is formed on the gate dielectric. The semiconductor pattern is comprised of an active layer and an ohmic contact layer forming a channel. An open hole exposing the active layer is formed on a data pattern(250). A protective layer(270) covers the data pattern. The data pattern is comprised of a first data line(252) and a second data line(254). The first data line is formed to be overlapped with the ohmic contact layer of the semiconductor pattern in the same pattern. The second data line is formed to be intersected with the first data line. The open hole exposing the active layer is formed on the second data line.</p> |
