| 摘要 |
<p>A method for forming a semiconductor device is provided to form micro contacts having the same size by selectively patterning a first contact hole region although the micro contacts are arranged irregularly. A first photoresist pattern of positive type defining a first and a second contact holes is formed on a semiconductor substrate. A reflow process is performed to the first photoresist pattern. A second photoresist pad pattern(150) of negative type which shields a second contact hole region is formed on the first photoresist pattern. When the first photoresist pattern is formed, a first ARC(Anti-Reflective Coating) is formed on the semiconductor substrate, a first photoresist pattern is formed on the first ARC, a second ARC is formed on the first photoresist, and exposure and developing processes are performed to the first photoresist by using a mask which defines the first and second contact holes.</p> |
