SEMICONDUCTOR DEVICE AND METHOD FOR FORMING FINE PATTERN OF THE SAME

摘要

A method for forming a fine pattern of a semiconductor device is provided to improve integration and yield of a semiconductor device by forming a fine pattern having a uniform CD(critical dimension) regardless of overlay accuracy of exposure equipment. A first hard mask layer is formed on a semiconductor substrate(110) including an etch target layer. A second hard mask layer pattern is formed on the first hard mask layer by using a mask having a line/space pattern. A spacer is formed on the sidewall of the second hard mask layer pattern. A first selective etch process is performed on the first hard mask layer to form a first hard mask layer pattern(122) by using the spacer as an etch mask. The second and first hard mask layer patterns are buried by a second insulation layer. A second selective etch process is performed on the second mask layer pattern and the first hard mask layer pattern formed under the second mask layer pattern to form a first-1 hard mask layer pattern. The second insulation layer and the spacer are removed. The etch target layer is patterned to form a fine pattern by using the first-1 hard mask layer pattern as an etch mask. The process for forming the spacer can include the following steps. The second hard mask layer is buried by the first insulation layer. The first insulation layer is etched-back to form the spacer on the sidewall of the second hard mask layer pattern.