MEMORY CELL PROGRAMMING METHOD AND SEMICONDUCTOR MEMORY DEVICE USING 3 LATCHES

摘要

A memory cell programming method using three latches and a semiconductor memory device thereof are provided to perform memory cell programming without internal reading of prior bit from a memory cell, by using three latches. At least one memory cell stores data of n bits where n is a natural number equal to or larger than 3. A first latch(210) receives the data and then latches the data. A second latch(220) latches k-th bit to be written in the memory cell from the first latch where k is a natural number equal to or larger than 2. A third latch(230) latches (k-1)th bit written in the memory cell from the first latch. The k-th bit latched in the second latch is written in the memory cell, by referring to the (k-1)th bit latched in the third latch.