METHOD FOR MESURING PATTERN IN SEMICONDUCTOR MANUFACTURING PROCESS

摘要

A method for measuring a pattern in a semiconductor fabricating process is provided to embody an OPC(optical proximity correction) modeling with high precision by using an OCD(optical critical dimension). A test pattern(110) for OPC modeling is regularly scanned from various angles by a light source of a short wavelength to detect scattered light so that horizontal and vertical dimensions of the pattern are simultaneously measured. Helium-neon laser can be used in the light source of a short wavelength. A scatterometer can be used in scanning the pattern.