| 摘要 |
A method for etching a wafer is provided to prevent an etch stop phenomenon from occurring due to imbalance of a deposition quantity and an etch quantity by repeatedly performing a deposition process, an etch process and a cleaning process. A wafer(100) having a predetermined mask pattern(200) is disposed in a plasma chamber. While a predetermined pressure is maintained in the plasma chamber, a first gas is injected into the plasma chamber to deposit polymer on the surface of the wafer. A second gas is injected into the plasma chamber to etch the polymer and the wafer. A third gas is injected into the plasma chamber to clean the polymer remaining on the surface of the wafer. The processes for depositing, etching and cleaning the polymer are repeated. An inert gas can further be injected in the cleaning process.
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