TEG PATTERN AND METHOD FOR TESTING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A TEG(Test Element Group) pattern and a test method of a semiconductor device using the same are provided to confirm a level of leakage current which is generated by misaligned landing of an M1C(Metal 1 Contact) on an active region through silicon substrate data. A plurality of device isolation layer patterns(123) is at regular intervals. An active region pattern(125) is formed between the device isolation layer patterns. An M1C pattern(127) is formed in the active region pattern. The device isolation layer patterns and the M1C pattern have higher values than the minimum design rule.