| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to reduce a gap between micro lenses to increase the fill factor by forming a hole with a predetermined depth at a flattening layer between micro lenses. A plurality of photodiodes(32) are formed on a semiconductor substrate(31), and generate charges according to the incident light. An interlayer dielectric layer(33) is formed on a entire surface of the semiconductor substrate including the photodiodes. A plurality of color filter layers(34) are formed on the interlayer dielectric layer, corresponding to the photodiodes. A flattening layer(35) is formed on the entire surface of the substrate including the color filter layer. A hole(37) is formed as a predetermined depth on the flattening layer at a border site of the color filter layer. A micro lens(39) is formed at the flattening layer.
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