| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to form simultaneously a contact hole of a cell region and a contact hole of a peripheral circuit region by performing a mask process once. A cell region(A) and a peripheral circuit region(B) are defined on a semiconductor substrate(110). An etch-stop layer(180) is formed on the substrate corresponding to the cell region. An interlayer dielectric(200) is formed on the entire surface of the semiconductor substrate including the etch-stop layer. The interlayer dielectric of the cell region and the interlayer dielectric of the peripheral circuit region are simultaneously etched to form contact holes in the cell region and the peripheral circuit region. The etch-stop layer is removed from the cell region exposed by the contact hole.</p> |
