METHOD FOR ETCHING SEMICONDUCTOR DEVICE WITH MULTI LAYER STACK

摘要

A method for etching a semiconductor device having a multi-layer stack is provided to prevent deformation of an etch profile by using a passivation layer. A first stack layer including a titanium-based layer and a tungsten-based layer is formed. A second stack layer including a tungsten silicide and a tungsten-based layer is formed on the first stack layer. A second stack layer pattern(102A) is formed by etching the second stack layer. A passivation layer is formed to protect at least a sidewall of the second stack layer pattern. The first stack layer under the passivation layer is etched. The passivation layer is formed with a material having high etch selectivity in a process for etching the first and second stack layers.