| 摘要 |
A Trench MOSFET includes a trench region ( 16 ) provided on a semiconductor substrate. The semiconductor substrate includes a P-type semiconductor substrate ( 1 ), a P-type semiconductor epitaxial layer ( 2 ), an N-type semiconductor body region ( 3 ), and a P-type semiconductor source diffusion ( 7 ). The substrate ( 1 ), the epitaxial layer ( 2 ), the body region ( 3 ), and the source diffusion ( 7 ) are adjacently formed in this order. A P-type semiconductor channel region ( 4 ) formed of a SiGe layer is provided on a bottom surface and a side wall of the trench region ( 16 ). This facilitates carrier movement in the channel region 4, reducing ON resistance of the Trench MOSFET. Thus, a Trench MOSFET allowing reduction in the ON resistance without reducing a breakdown voltage is realized.
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