| 摘要 |
A method for forming an optical sensor. First, a structure which comprises a semiconductor substrate is provided. Then, a first electrode and a fourth electrode are formed at a first depth in the semiconductor substrate. Then, a second electrode and a fifth electrode are formed at a second depth in the semiconductor substrate. Then, a third electrode and a sixth electrode are formed at a third depth in the semiconductor substrate. The first depth is greater than the second depth which is greater than the third depth. First, second, and third semiconducting regions of the semiconductor substrate are disposed between and in direct physical contact with the first and fourth electrodes, the second and fifth electrodes, and the third and sixth electrodes, respectively. The first, second, and third semi-conducting regions are in direct physical contact with one another.
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