发明名称 Thin oxide dummy tiling as charge protection
摘要 The present invention pertains to a system and method for implementing dummy tiles in forming a memory device. The system and method involves forming at least a portion of a memory core array upon a semiconductor substrate comprising, forming STI structures in the substrate, depositing an oxide layer over the substrate, forming a first polysilicon layer over the oxide layer, doping the first polysilicon layer, forming a second polysilicon layer over the first polysilicon layer, patterning at least one memory core, patterning at least one dummy tile and performing back end processing.
申请公布号 US2008153269(A1) 申请公布日期 2008.06.26
申请号 US20060645475 申请日期 2006.12.26
申请人 CHEN CINTI;HE YI;LI WENMEI;LIU ZHIZHENG;KWAN MING-SANG;SUN YU;YANG JEAN YEE-MEI 发明人 CHEN CINTI;HE YI;LI WENMEI;LIU ZHIZHENG;KWAN MING-SANG;SUN YU;YANG JEAN YEE-MEI
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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