| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate which does not cause cracking in the electrode or a semiconductor thin film constituting the thin-film transistor nor exfoliate easily even with heat or atmosphere when a thin-film transistor substrate is produced using a plastic base exhibiting poor dimensional stability. SOLUTION: The thin-film transistor substrate comprises a plastic base 10, a compressive stress film 12 composed of an inorganic material on the plastic base 10, and a metal electrode film 15 or a semiconductor thin-film 13 formed on the compressive stress film 12. Preferably, the compressive stress film 12 has a stress value of 0.05 GPa or above and an absolute value of 1.0 GPa or less, and the compressive stress film 12 is preferably any one selected from a group of silicon oxide film, silicon nitride film, aluminum oxide film, aluminum nitride film, aluminum oxynitride film, and silicon oxynitride film. COPYRIGHT: (C)2008,JPO&INPIT
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