| 摘要 |
A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second dielectric layer. The method also forms a hard mask layer over the control gate layer, forms a bottom anti-reflective coating (BARC) layer over the hard mask layer, and provides an etch chemistry that includes tetrafluoromethane (CF<SUB>4</SUB>) and trifluoromethane (CHF<SUB>3</SUB>) to etch at least the control gate layer.
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