发明名称 PROGRAMMING A NORMALLY SINGLE PHASE CHALCOGENIDE MATERIAL FOR USE AS A MEMORY OR FPLA
摘要 A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200°C for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
申请公布号 WO2007127014(A3) 申请公布日期 2008.06.26
申请号 WO2007US07859 申请日期 2007.03.29
申请人 OVONYX, INC.;GORDON, GEORGE, A.;PARKINSON, WARD, D.;PETERS, JOHN, M.;LOWREY, TYLER, A.;OVSHINSKY, STANFORD;WICKER, GUY, C.;KARPOV, ILYA, V.;KUO, CHARLES, C. 发明人 GORDON, GEORGE, A.;PARKINSON, WARD, D.;PETERS, JOHN, M.;LOWREY, TYLER, A.;OVSHINSKY, STANFORD;WICKER, GUY, C.;KARPOV, ILYA, V.;KUO, CHARLES, C.
分类号 H01L45/00 主分类号 H01L45/00
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