发明名称 Memorisation device with multi-level structure
摘要 <p>The device (100) has a set of cylindrical columns (6a, 6b) arranged in a stack (4) of shells (4a, 4b) and transversing each shell, where each column is formed by semiconductor material portions (8a, 8b) surrounding of electric charge storage layers (10a, 10b). The electric charge storage layers are electrically isolated from the semiconductor material portions and stack of shells. Voltage supplying units are provided for supplying voltage to a terminal of the columns, and comprise a movable micro-point network. An independent claim is also included for a method for manufacturing a data storage device.</p>
申请公布号 EP1936691(A1) 申请公布日期 2008.06.25
申请号 EP20070123345 申请日期 2007.12.17
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 GIDON, SERGE
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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