NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

A nitride semiconductor substrate and a method for manufacturing the same are provided to prevent the warpage of a substrate and the crack of a nitride semiconductor layer due to a thermal deformation by varying a pitch between trenches, or a width and depth of the trenches. A plurality of first trenches(11) are formed on one surface of a base substrate(10). The first trenches are parallel with each other in a first direction. A nitride semiconductor layer(20) is formed on the other surface of the base substrate opposite to the one surface on which the first trenches are formed. A pitch between two of the first trenches is progressively decreased from a center section of the base substrate to an edge section thereof. A plurality of second trenches are formed on the base substrate in a second direction intersected with the first direction. The second trenches are parallel with each other in the second direction.