| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving controllability in a channel with a control gate, decreasing a drive voltage when reading data, and increasing drive speed, and to provide a method of manufacturing the semiconductor device. SOLUTION: There are provided: a tunnel gate insulating film 11 and a gate insulating film 15 formed on the side and upper surface of an Si layer 5; a floating gate 13 buried in the gate insulating films 11, 15 and insulated from the periphery; and a control gate 17, namely a II type gate electrode, formed from one side of the Si layer 5 to the other side by passing through the upper surface via the gate insulating films 11, 15. In a sectional view along a Y-Y' line, a floating gate 13 is arranged between the side of the Si layer 5 and the control gate 17, and the floating gate 13 is not arranged between the upper surface of the Si layer 5 and the control gate 17. COPYRIGHT: (C)2008,JPO&INPIT
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