<p>Provided is a semiconductor storage device wherein data can be rewritten at a high speed with a small current consumption on a memory cell array having a variable resistive element. In a variable resistive element (11), the status of electrical resistance varies from a first status to a second status by application of a first rewrite voltage, and from the second status to the first status by application of a second rewrite voltage. The semiconductor storage device is provided with a memory cell array (20) wherein memory cells (10) are arranged in matrix. In the memory cell, one end of the variable resistive element and a source or drain of a selective transistor (12) are connected. A first rewrite current required for first rewrite operation for varying the electrical resistance of the variable resistive element (11) from the first status to the second status is larger than a second rewire current required for second rewrite operation for changing the status from the second status to the first status. A first memory cell number of the memory cells which execute the first rewrite operation at the same time is larger than a second memory cell number of the memory cells which execute the second rewrite operation at the same time, and the second memory cell number is at least two.</p>
