| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and an electro-optical device capable of each obtaining a stable output even if source-drain current fluctuates in the saturated operating region of a thin film transistor caused by kink effect. <P>SOLUTION: The thin film transistor 10 has a polycrystalline silicon film 1a as an active layer and has a multi-gate structure where a first thin film transistor section 10a on the drain side and a second thin film transistor 10b on the source side are connected in series. The first thin film transistor section 10a includes a first front gate electrode 3a and a drain-side back gate electrode 8a electrically connected to the first front gate electrode 3a, and the second thin film transistor section 10b includes a second front gate electrode 3b and a source-side back gate electrode 8b to which a source potential is applied. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
