| 摘要 |
A light emitting diode device and a method for manufacturing the same are disclosed. The method comprises following steps: (A) providing a substrate; (B) forming a diamond layer on the surface of the substrate; (C) forming a doping region on the upper surface of the diamond layer; (D) bonding a semiconductor epitaxy layer on the upper surface of the diamond layer; and (E) removing the substrate. Accordingly, owing to the absence of an adhesion layer necessary for a conventional LED, the LED of the present invention can reduce the blockage for heat transfer caused by a resin adhesion layer and light obscuration caused by a metal adhesion layer so as to enhance the efficiency of heat dissipation of LEDs, simplify the process, and enhance the performance and the stability of products.
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