| 摘要 |
A TFT(Thin Film Transistor) array substrate and a method of manufacturing the TFT array substrate are provided to decrease the manufacturing cost by reducing the number of masks, and prevent a channel region of a TFT from being damaged by forming an etch stopper. A TFT array substrate includes a gate line, a gate electrode(43) and a gate pad electrode extended from the gate line, an insulating pattern(53) formed on the gate electrode, and an active layer(57) formed on the insulating pattern. The active layer has the same pattern as the insulating pattern. The TFT array substrate further includes an etch stopper(45) formed on the active layer, a data line(30) intersecting the gate line to define a pixel region, a link electrode(67) extended from the data line, and source and drain electrodes(41,42) formed on the gate electrode having the insulating pattern and the active layer disposed therebetween. The etch stopper is disposed between the source and drain electrodes. The TFT array substrate further includes an ohmic contact layer(58) formed under the source and drain electrodes, a data pad electrode(91) connected to the link electrode, and a pixel electrode(60) formed in the pixel region. The gate line, the gate electrode, the gate pad electrode, the data pad electrode includes a transparent conductive layer. |
