PRODUCTION METHOD OF CRYSTALLINE SEMICONDUCTOR FILM AND HEATING CONTROL METHOD OF SEMICONDUCTOR FILM AND SEMICONDUCTOR CRYSTALLIZING DEVICE

摘要

To obtain a crystalline semiconductor film having a sufficiently small and uniform crystal particle size on a substrate. Preferably, a glass substrate (8) having an amorphous semiconductor film (9) at the upper layer thereof is heated and kept in a heated state. The amorphous semiconductor film (9) on the glass substrate (8) is irradiated with a laser beam (20) to heat the film to a level not exceeding a melting point and crystallize the film (9). Accordingly, a crystalline semiconductor film having a small and uniform crystal particle size can be obtained on the substrate without any damage to the glass substrate. When the glass substrate is kept heated before laser beam irradiation, temperature variation for each shot of laser beam can be controlled to be uniform. In addition, a laser beam irradiation removes crystal defects and eliminates impurities existing in the amorphous semiconductor film and contaminations deposited on the surface thereof.