| 摘要 |
A method for forming an interlayer dielectric in a semiconductor device is provided to prevent an upper portion of a pattern from having a sharp shape by using an etching gas with a high selection ratio of a nitride film with respect to an oxide film. A pattern with a gap is formed on a semiconductor substrate. A first insulation film, which buries a portion of the gap, is formed on the semiconductor substrate. A portion of the first insulation film is etched by using an etching gas with a high selection ratio of a material film forming an upper portion of the pattern with respect to the first insulation film. A second insulation film, which buries the gap, is formed on the partially etched first insulation film. The first insulation film is an oxide film. The material film constituting an upper portion of the pattern is a nitride film.
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