| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a structure of a storage device which can operate memory elements utilizing silicide reaction without changing a voltage value, and its driving method. <P>SOLUTION: The storage device includes a memory element 101 and a circuit 102 which changes the polarity of an applying voltage to the memory element for writing and for reading. The memory element includes at least a first conductive layer 108, a silicon film 109 formed over the first conductive layer, and a second conductive layer 110 formed over the silicon film. Also, the first conductive layer and the second conductive layer of the memory element are formed using different materials. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
