| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a damage of a semiconductor chip and a bump peripheral portion in a semiconductor device in which a semiconductor chip is face-down-mounted. <P>SOLUTION: The semiconductor device 100 includes a BGA substrate 110, a semiconductor chip 101, a bump 106, and an underfill 108 filled around the bump 106. An interlayer dielectric 104 of the semiconductor chip 101 is made of a low dielectric constant film. The bump 106 is made of Pb-free solder. The underfill 108 is made of a resin material in which a coefficient of elasticity is not lower than 150 MPa and not higher than 800 MPa, and a coefficient of linear expansion in a direction in a substrate face of the BGA substrate 110 is less than 14 ppm/°C. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
