RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, CONTAINING AROMATIC FUSED RING-CONTAINING RESIN

摘要

This invention provides a resist underlayer film forming composition for lithography, which, in order to prevent a resist pattern from collapsing after development involved in the fining of the resist pattern, is applied to a multilayer film process by a thin film resist, has a lower dry etching speed than resists and semiconductor substrates and has satisfactory etching resistance in relation to a substrate to be treated in the treatment of the substrate. The resist underlayer film forming composition for use in a lithographic process by a multilayer film contains a polymer having an aromatic fused ring-containing unit structure, a protected carboxyl group-containing unit structure, and an oxy ring-containing unit structure. There are also provided a method for pattern formation, using the resist underlayer film forming composition, and a method for manufacturing a semiconductor device, using the method for pattern formation.