| 摘要 |
A self-converged memory material element is created during the manufacture of a memory Cell comprising a base layer, with a bottom electrode, and an upper layer having a third, planarization stop layer over the base layer, a second layer over the third layer, and the first layer over the second layer. A keyhole opening is formed through the upper layer to expose the bottom electrode. The first layer has an overhanging portion extending into the opening. A dielectric material is deposited into the keyhole opening so to create a self-converged void within the keyhole opening. An anisotropic etch forms a sidewall of the dielectric material in the keyhole opening with an electrode hole aligned with the void and exposing the bottom electrode. A memory material is deposited into the electrode hole in contact with the bottom electrode and is planarized down to the third layer to create the memory material element.
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