发明名称 Graded hybrid amorphous silicon nanowire solar cells
摘要 In some embodiments, the present invention is directed to compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive. In other embodiments, the present invention is directed to methods of making such photovoltaic devices, as well as to applications which utilize such devices (e.g., solar cell modules).
申请公布号 US2008135089(A1) 申请公布日期 2008.06.12
申请号 US20060599722 申请日期 2006.11.15
申请人 GENERAL ELECTRIC COMPANY 发明人 TSAKALAKOS LOUCAS;JOHNSON JAMES NEIL;MANIVANNAN VENKATESAN
分类号 H01L31/042;B05D5/12;C25D5/00;H01L21/00;H01L31/065;H05H1/24 主分类号 H01L31/042
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