PHASE CHANGE MEMORY DEVICE WITH FINE CONTACT POINT AND METHOD OF FABRICATING THE SAME

摘要

A phase change memory device and a manufacturing method thereof are provided to reduce a contact area between a heat radiating electrode and a phase change layer pattern by contacting a side of the heat radiating electrode with the phase change layer pattern. A lower electrode(110) is formed on a semiconductor substrate(100), and a first insulating pattern(122) is formed on the lower electrode. A heat radiating electrode(132) is extended from the first insulating pattern to the lower electrode, on which one side is laid on the first insulating pattern. A second insulating pattern(124) is formed on the heat radiating electrode in the same pattern as the heat radiating pattern. A phase change layer pattern(134) is extended from the second insulating pattern to the first insulating pattern, of which a portion contacts one side of the heat radiating electrode on the first insulating pattern. A contact(142) is electrically connected to the phase change layer pattern, and an upper electrode(144) is electrically connected to the phase change layer pattern.