发明名称 Power Mode Transition in Multi-Threshold Complementary Metal Oxide Semiconductor (MTCMOS) Circuits
摘要 In one embodiment, a method for power mode transition in a multi-threshold complementary metal oxide semiconductor (MTCMOS) circuit includes clustering logic cells in the circuit to a number of logic clusters and optimizing wake-up times of the logic clusters to reduce a total turn-on time of the circuit while keeping below a predetermined threshold a sum of currents flowing from the circuit to ground, a sum of currents flowing from a supply voltage to the circuit, or both during a transition by the circuit from sleep mode to active mode.
申请公布号 US2008133954(A1) 申请公布日期 2008.06.05
申请号 US20060421380 申请日期 2006.05.31
申请人 FALLAH FARZAN;ABDOLLAHI AFSHIN;PEDRAM MASSOUD 发明人 FALLAH FARZAN;ABDOLLAHI AFSHIN;PEDRAM MASSOUD
分类号 G06F1/32 主分类号 G06F1/32
代理机构 代理人
主权项
地址