| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor heterojunction field effect transistor where a normally-off action can be attained, a sufficient channel current can be acquired, and a threshold voltage can be easily controlled. SOLUTION: A floating gate layer 32, which is equipped with a negative charge and serves as a third layer, is provided between a control gate electrode 34 and an AlGaN layer 11, so that the potential of the AlGaN layer 11, which is located substantially adjacent to the floating gate layer 32, is substantially set high to electrons, and a channel is depleted. By this setup, a current (a drain current) is restrained from flowing through the channel when a gate voltage is zero, that is, the so-called normally-off action can be attained. COPYRIGHT: (C)2008,JPO&INPIT |
