发明名称 |
Method for fabricating an organic thin film transistor by oxidation and selective reduction of organic semiconductor material |
摘要 |
Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.
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申请公布号 |
US2008128684(A1) |
申请公布日期 |
2008.06.05 |
申请号 |
US20070819036 |
申请日期 |
2007.06.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO HWAN;HAHN JUNG SEOK;LEE SANG YOON;KOO BON WON |
分类号 |
H01L51/40;H01L51/00 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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