| 摘要 |
A process for producing a silicon carbide semiconductor device, comprisin g the steps of on semiconductor laminate substrate (4) having first conducti ve silicon carbide crystal substrate (1), first conductive silicon carbide c rystal layer (2), second conductive silicon carbide crystal layer (3) and fi rst conductive semiconductor region (5), forming groove (7) passing through the first conductive semiconductor region (5) and second conductive silicon carbide crystal layer (3) and having its bottom plane (7b) defined by the fi rst conductive silicon carbide crystal layer (2); forming silicon film (14) on at least part of the groove (7); heating the semiconductor laminate subst rate (4) provided with the silicon film (14) at a temperature not lower than the melting point of the silicon film (14); removing the silicon film (14) after the heating; forming a gate insulating film on an exposed surface resu lting from the removal of the silicon film (14); and forming a gate electrod e layer on the surface of the gate insulating film.
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