发明名称 Micro devices manufacturing method comprising the use of a second pattern overlying an alignment mark to reduce flattening
摘要 An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.
申请公布号 US5601957(A) 申请公布日期 1997.02.11
申请号 US19950457232 申请日期 1995.06.01
申请人 NIKON CORPORATION 发明人 MIZUTANI, SHINJI;OTA, KAZUYA;YASUDA, MASAHIKO
分类号 G03F9/00;(IPC1-7):G03F9/00 主分类号 G03F9/00
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