发明名称 |
Micro devices manufacturing method comprising the use of a second pattern overlying an alignment mark to reduce flattening |
摘要 |
An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.
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申请公布号 |
US5601957(A) |
申请公布日期 |
1997.02.11 |
申请号 |
US19950457232 |
申请日期 |
1995.06.01 |
申请人 |
NIKON CORPORATION |
发明人 |
MIZUTANI, SHINJI;OTA, KAZUYA;YASUDA, MASAHIKO |
分类号 |
G03F9/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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