| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for minimizing electric power used for programming a memory cell in a phase change memory cell. <P>SOLUTION: A memory cell includes a first electrode 202 and a second electrode 208 forming an opening. The opening is defined by a first sidewall 214, a second side wall 218, and a surface 216 extending between the first side wall and the second side wall. The memory cell includes phase change material contacting with the first electrode, the first side wall, and the second side wall. The memory cell includes isolation material electrically isolating the phase change material from the surface extending between the first side wall and the second side wall. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
