Offset-gate-type semiconductor device

摘要

A semiconductor device includes a first semiconductor region (30) having a first conductivity type, a second semiconductor region (31) formed on the first semiconductor region (30) and having the first conductivity type, a third semiconductor region (34, 35) formed in a surface of the second semiconductor region (31) and having a second conductivity type, a fourth semiconductor region (33) formed in the surface of the second semiconductor region (31) and having the second conductivity type, and a gate structure (36, 37) formed on the second and fourth semiconductor region (31, 33). The semiconductor device further includes a conductive member (39) arranged in the trench (38) extending from a surface of the fourth semiconductor region (33) to the first semiconductor region (30), the trench (38) having one sidewall surface flush with a sidewall surface of the gate structure (36, 37).