| 摘要 |
<p>A semiconductor light-emitting device, the device includes a substrate, a semiconductor stacked layer, a lead electrode and a lead, wherein the semiconductor stacked layer at least includes a N-type layer and a P-type layer, at least one of the N-type layer and the P-type layer has an opening, the opening is just beneath the lead; or includes a conductive substrate having a main surface and a back surface, a adhesive metal layer, a reflective/ohmic metal layer, a semiconductor stacked layer , a lead electrode and a lead sequentially deposited on the main surface of the substrate, the reflective/ohmic metal layer has an opening, the opening is just beneath the lead.</p> |
